Low temperature (∼250 °C) layer exchange crystallization of Si1-xGex (x=1-0) on insulator for advanced flexible devices

被引：27
作者：
Park, Jong-Hyeok [1 ]
Kurosawa, Masashi [1 ,2 ]
Kawabata, Naoyuki [1 ]
Miyao, Masanobu [1 ]
Sadoh, Taizoh [1 ]
机构：
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[2] JSPS, Chiyoda Ku, Tokyo 1028472, Japan
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 08期
关键词：
SiGe; Au-induced crystallization; Thin-film solar cell; System-in-display; INDUCED LATERAL CRYSTALLIZATION; SILICON THIN-FILMS; SI;
D O I：
10.1016/j.tsf.2011.10.087
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low-temperature (similar to 250 degrees C) layer exchange crystallization of poly-Si1-xGex (x=1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (similar to 250 degrees C, 20 h) of the a-Si1-xGex (x=1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码：3293 / 3295
页数：3
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