How to distinguish the Raman modes of epitaxial GaN with photon features from sapphire substrate - Optical properties of GaN film grown by metalorganic chemical vapor deposition - Comment

被引：10
作者：
Feng, ZC
Schurman, M
Stall, RA
机构：
[1] EMCORE Research Laboratory, Somerset
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 04期
关键词：
D O I：
10.1116/1.580759
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present correct assignments to the Raman spectrum of an epitaxial hexagonal GaN film grown on (0001) sapphire, published by Zhang et al. [J. Vac. Sci. Technol. A 14, 840 (1996)]. These assignments are supported by our additional polarization and incident angle-varied Raman measurements. A method to distinguish the Raman features of the epitaxial GaN thin layer from those of the sapphire substrate is presented. (C) 1997 American Vacuum Society.
引用
收藏
页码：2428 / 2430
页数：3
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