Effect of neutron irradiation on the capacitance hysteresis in GaAs Schottky diodes with self-assembled InAs quantum dots

被引：1

作者：

Gubanov, A. ^{[1
]}

Schramm, A. ^{[1
]}

Polojarvi, V. ^{[1
]}

Guina, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 32期

基金：

芬兰科学院;

关键词：

FIELD-EFFECT TRANSISTOR; PROTON-IRRADIATION; PHOTOLUMINESCENCE; OPERATION; EMISSION;

D O I：

10.1088/0022-3727/46/32/325102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the effect of neutron irradiations on the capacitance hysteresis in n-type GaAs Schottky diodes with incorporated self-assembled InAs quantum dots. After irradiation the hysteresis shifted to higher voltages and the maximum hysteresis opening decreased. The voltage shift is attributed to a change in the effective doping concentration due to introduction of defects. The decreased hysteresis opening in the irradiated sample is caused by defect-assisted tunnelling processes.

引用

页数：4

共 25 条

[1] Effect of proton-irradiation on photoluminescence emission from self-assembled InAs/GaAs quantum dots [J].

Cheng, C. Y. ;

Niu, H. ;

Chen, C. H. ;

Yang, T. N. ;

Wang, H. Y. ;

Lee, C. P. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2) :1171-1175

[2] Electrical characterization of InAs/GaAs quantum dots by frequency spectroscopy [J].

Engstroem, O. ;

Eghtedari, A. ;

Kaniewska, M. .

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2007, 27 (5-8) :936-940

[3] A write time of 6 ns for quantum dot based memory structures [J].

Geller, M. ;

Marent, A. ;

Nowozin, T. ;

Bimberg, D. ;

Akcay, N. ;

Oncan, N. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[4]

Grundmann M., 2002, NANOOPTOELECTRONICS

[5] Radiation hardness of InGaAs/GaAs quantum dots [J].

Guffarth, F ;

Heitz, R ;

Geller, M ;

Kapteyn, C ;

Born, H ;

Sellin, R ;

Hoffmann, A ;

Bimberg, D ;

Sobolev, NA ;

Carmo, MC .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1941-1943

[6] Memory characteristics of InAs quantum dots embedded in GaAs quantum well [J].

Kannan, E. S. ;

Kim, Gil-Ho ;

Ritchie, D. A. .

APPLIED PHYSICS LETTERS, 2009, 95 (14)

[7] Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots [J].

Koike, K ;

Saitoh, K ;

Li, S ;

Sasa, S ;

Inoue, M ;

Yano, M .

APPLIED PHYSICS LETTERS, 2000, 76 (11) :1464-1466

[8]

Ledentsov N. N, 1999, QUANTUM DOT HETEROST

[9] Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots [J].

Leon, R ;

Swift, GM ;

Magness, B ;

Taylor, WA ;

Tang, YS ;

Wang, KL ;

Dowd, P ;

Zhang, YH .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :2074-2076

[10] Proton-irradiation-induced intermixing of InGaAs quantum dots [J].

Lever, P ;

Tan, HH ;

Jagadish, C ;

Reece, P ;

Gal, M .

APPLIED PHYSICS LETTERS, 2003, 82 (13) :2053-2055

← 1 2 3 →