BF2+ ion implantation in strained-Si/SiGe/Si hetero-structures

被引：0
作者：
Morioka, J
Irieda, S
Ishidoya, Y
Inada, T [1 ]
Sugii, N
机构：
[1] Hosei Univ, Grad Sch Engn, Koganei, Tokyo 1848584, Japan
[2] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词：
strained-Si/SiGe; ion implantation; ion mixing; enhanced mobility; electrical profile;
D O I：
10.1016/j.nimb.2005.08.117
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Physical and electrical measurements have been made to examine fundamental properties of strained-Si/Si0.7Ge0.3/Si hetero-structures implanted with 50 keV BF2+ ions. Although an implantation-induced amorphous layer is regrown during rapid thermal annealing, secondary defects are introduced if annealing is done above 900 degrees C. It is revealed that hole mobility is enhanced in strained-Si layers with hole concentrations between 5.0 x 10(19) and 1.2 x 10(20) cm(-3). The Si/SiGe interface is broadened during implantation and the ion-mixing rate is estimated to be about 0.3 atom/ion. Suppression of the redistribution of Ge into the Si layer is a crucial issue to achieve enhanced mobility in ion-implanted, strained-Si grown on SiGe. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：630 / 632
页数：3
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