Growth and Characterization of Na0.5Bi0.5TiO3 Thin Films with BaTiO3 Buffer Layer (Study of Au/Na0.5Bi0.5TiO3/BaTiO3/Pt Capacitor)

被引：7

作者：

Daryapurkar, A. S. ^{[1
]}

Kolte, J. T. ^{[1
]}

Gopalan, P. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

来源：

FERROELECTRICS | 2013年 / 447卷 / 01期

关键词：

Sodium bismuth titanate; thin films; dielectric; SIMS; PLD; ELECTRICAL-PROPERTIES;

D O I：

10.1080/00150193.2013.821859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lead free bilayer capacitor structure has been fabricated as a combination of sodium bismuth titanate (Na0.5Bi0.5)TiO3 (NBT) thin films with barium titanate, (BaTiO3) (BT) buffer layer in situ using pulsed laser deposition (PLD). PLD control parameters have been optimized using Taguchi approach to obtain good quality NBT and BT thin films. It has been observed that dielectric properties of NBT thin films enhanced by inserting BT buffer layer. This improvement in the dielectric properties of NBT thin films have been discussed in relation to the effect of the buffer layer on the structure, microstructure and interface of the NBT/BT multilayer capacitor.

引用

页码：46 / 55

页数：10

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