Characteristics of a large-area plasma source using internal multiple U-type antenna

In this study, an internal-type antenna (multiple U-type antenna) was used as a large-area (1,020 mm x 830 mm) inductively coupled plasma (ICP) source, and the electrical characteristics, such as the voltage, current, phase, etc., of the antenna and the characteristics of the Ar plasma were investigated. In addition, using the ICP source with multiple U-type antenna, the etching characteristics, such as the etch rates and etch uniformities, of the photoresist on a large-area substrate (880 mm x 660 mm) were investigated using an 02 plasma. The plasma density obtained with the multiple U-type antenna was about 2 x 10(11)/cm(3) at an rf power of 5000 W and an Ar pressure of 15 mTorr. When the photoresist was etched using the ICP source, an etch rate of about 0.54 mu m/min with an etch uniformity of 7 % over the entire substrate area was obtained for an 02 pressure of 15 mTorr, an rf power of 5000 W, and a dc bias voltage of - 100 V.