CdF2/CaF2 resonant tunneling diode fabricated on Si(111)

被引：39

作者：

Izumi, A

Matsubara, N

Kushida, Y

Tsutsui, K

Sokolov, NS

机构：

[1] TOKYO INST TECHNOL,INTERDISCIPLINARY GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

[2] RUSSIAN ACAD SCI,AF IOFFE PHYSICOTECH INST,ST PETERSBURG 194021,RUSSIA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

resonant tunneling diode; CdF2; CaF2; Si(111); peak-to-valley current ratio;

D O I：

10.1143/JJAP.36.1849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose use of a new material, CdF2, and a heterostructure composed of CdF2 and CaF2 for applications of Si-based quantum effect devices. The optimum growth temperature for each layer of a CaF2/CdF2/CaF2 heterostructure grown by molecular beam epitaxy on a Si(111) substrate was determined. Resonant tunneling diodes consisting of this heterostructure on Si were fabricated and negative differential resistance whose P/V current ratio was 24 at maximum was detected at room temperature.

引用

页码：1849 / 1852

页数：4

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