CdF2/CaF2 resonant tunneling diode fabricated on Si(111)

被引：39

作者：

Izumi, A

Matsubara, N

Kushida, Y

Tsutsui, K

Sokolov, NS

机构：

[1] TOKYO INST TECHNOL,INTERDISCIPLINARY GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

[2] RUSSIAN ACAD SCI,AF IOFFE PHYSICOTECH INST,ST PETERSBURG 194021,RUSSIA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

resonant tunneling diode; CdF2; CaF2; Si(111); peak-to-valley current ratio;

D O I：

10.1143/JJAP.36.1849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose use of a new material, CdF2, and a heterostructure composed of CdF2 and CaF2 for applications of Si-based quantum effect devices. The optimum growth temperature for each layer of a CaF2/CdF2/CaF2 heterostructure grown by molecular beam epitaxy on a Si(111) substrate was determined. Resonant tunneling diodes consisting of this heterostructure on Si were fabricated and negative differential resistance whose P/V current ratio was 24 at maximum was detected at room temperature.

引用

收藏

页码：1849 / 1852

页数：4

相关论文

共 24 条

[1] ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE-GROWN CAF2 ON SI(111) [J].

CHO, CC ;

KIM, TS ;

GNADE, BE ;

LIU, HY ;

NISHIOKA, Y .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :338-340

[2] STEPS AND SPIKES IN CURRENT-VOLTAGE CHARACTERISTICS OF OXIDE MICROCRYSTALLITE-SILICON OXIDE DIODES [J].

CHOU, SY ;

GORDON, AE .

APPLIED PHYSICS LETTERS, 1992, 60 (15) :1827-1829

[3]

FUKUDA M, 1996, 1996 INT C SOL STAT, P175

[4]

Hayes W., 1974, CRYSTALS FLUORITE ST

[5] RESONANT TUNNELING THROUGH SI-SIO2 DOUBLE BARRIERS [J].

HIROSE, M ;

MORITA, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :561-564

[6] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[7] Growth of CdF2/CaF2Si(111) heterostructure with abrupt interfaces by using thin CaF2 buffer layer [J].

Izumi, A ;

Kawabata, K ;

Tsutsui, K ;

Sokolov, NS ;

Novikov, SV ;

Khilko, AY .

APPLIED SURFACE SCIENCE, 1996, 104 :417-421

[8] STUDY OF BAND OFFSETS IN CDF2/CAF2/SI(111) HETEROSTRUCTURES USING X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

IZUMI, A ;

HIRAI, Y ;

TSUTSUI, K ;

SOKOLOV, NS .

APPLIED PHYSICS LETTERS, 1995, 67 (19) :2792-2794

[9] HIGH-QUALITY CDF2 LAYER GROWTH ON CAF2/SI(111) [J].

IZUMI, A ;

TSUTSUI, K ;

SOKOLOV, NS ;

FALEEV, NN ;

GASTEV, SV ;

NOVIKOV, SV ;

YAKOVLEV, NL .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1115-1118

[10] GAAS/ALAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE ON SI WITH LARGE PEAK TO VALLEY RATIO AT ROOM-TEMPERATURE [J].

KAN, SC ;

MORKOC, H ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2250-2251