Common-Gate Load-Pull With Q-Band Application

被引：8
作者：
Mahon, Simon J. [1 ]
Young, Alan C. [1 ]
Parker, Anthony E. [2 ]
机构：
[1] Macom Technol Solut, Sydney Design Ctr, Sydney, NSW 2060, Australia
[2] Macquarie Univ, Sydney, NSW 2109, Australia
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2012年 / 47卷 / 10期
基金：
澳大利亚研究理事会;
关键词：
Computer simulation; electromagnetic analysis; gallium arsenide; HEMTs; integrated circuit modeling; linear amplifiers; linearity; load-pull; microwave amplifiers; microwave devices; millimeter wave integrated circuits; millimeter wave measurements; MMICs; modeling; nonlinear distortion; Q-band; semiconductor device modeling; simulation;
D O I：
10.1109/JSSC.2012.2204913
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique is proposed for the design of linear power amplifiers at millimeter-wave frequencies where load-pull of large transistor output cells is difficult. The technique transforms the load-pull data on a small, standard foundry transistor layout to a pair of common-gate contours for the intrinsic device; one source-gate and one drain-gate. These are recombined as an intrinsic drain-source contour for a larger and arbitrary transistor layout. A Q-band driver amplifier for the ETSI 42-GHz point-to-point radio band has been designed using the proposed technique. The fabricated MMIC consumes 1W and has a gain of 21 dB, with OIP3 of 35 dBm, OIP5 of 28 dBm and P1 dB of 23 dBm. The PAE is approximately 19%. The OIP3 to P1 dB and OIP3 to dc power ratios are believed to be the best reported to date.
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页码：2282 / 2290
页数：9
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