Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon

被引：60

作者：

Mi, Z ^{[1
]}

Yang, J

Bhattacharya, P

Huffaker, DL

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 02期

关键词：

D O I：

10.1049/el:20063582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of multiple layers of self-organised InAs quantum dots as a very effective dislocation filter is demonstrated. In0.5Ga0.5As/GaAs quantum dot lasers grown directly on silicon substrates with the InAs quantum dot buffer layer exhibit substantially reduced threshold currents (J(th) similar to 900 A/cm(2)), compared to devices grown on silicon without the dot buffer layer (J(th) >= 1500 A/cm(2)).

引用

页码：121 / 123

页数：3

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