Normally-off GaN-on-Si Metal-Insulator-Semiconductor Field-Effect Transistor with 600-V Blocking Capability at 200°C

被引：0

作者：

Chu, Rongming ^{[1
]}

Brown, David ^{[1
]}

Zehnder, Daniel ^{[1
]}

Chen, Xu ^{[1
]}

Williams, Adam ^{[1
]}

Li, Ray ^{[1
]}

Chen, Mary ^{[1
]}

Newell, Scott ^{[1
]}

Boutros, Karim ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年

关键词：

GaN-on-Si; field-effect transistor; normally-off; blocking voltage; high temperature;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 degrees C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

引用

页码：237 / 239

页数：3

共 3 条

[1]

Chen L., 2011, INT C SIL CARB REL M

[2] 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic ON-Resistance [J].