共 4 条
Change of GMR parameters in N-ion implanted spin-valve
被引:0
作者:
Kim, DY
Kim, CG
[1
]
Kim, CO
Min, BK
Song, JS
机构:
[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[2] Hynix Co Ltd, Syst SBU, Kyoungki 476860, South Korea
[3] KERI, TFT, Adv Elect Device, Chang Won 614120, South Korea
关键词:
giant magneto resistance;
DDM;
N-ion implantation;
viscosity effects;
D O I:
10.1016/S0304-8853(01)00548-0
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Giant magnetoresistance (GMR) profiles have been measured as a function of the thickness of pinned NiFe layers for N-ion implanted spin-valve samples. The measured results are analyzed using the double-domain model (DDM), newly introducing the magnetic viscosity effect retarding the domain rotation by the defect or pinning centers. The hysteresis increase of GMR profiles after the ion implantation at theta = 90degrees can be explained by the magnetic viscosity effect of pinned NiFe layer. The simulation results, well fitted with the measured data, indicate that the N-ion implantation significantly raises the magnetic viscosity effect of the pinned NiFe layer. The magnetic viscosity effect after N-ion implantation exponentially decreases with the thickness of the pinned NiFe layer. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码:185 / 188
页数:4
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