Robust p-type behavior in polycrystalline, ball-milled, magnesium-doped Bi2Se3

被引:8
作者
Androulakis, J. [1 ]
Beciragic, E. [1 ]
机构
[1] Gentherm Inc, Azusa, CA 91702 USA
关键词
Thermoelectric material; Semiconductors; Ball-milling; Effective mass; CONDUCTION-BAND; SURFACE;
D O I
10.1016/j.ssc.2013.08.023
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study polycrystalline pellets of magnesium doped Bi2Se3 compacted from powders processed with planetary milling, a high energy crude metallurgical method. We present evidence that the specimens are p-type and that hole conduction is robust over a wide temperature range. The p-type behavior was probed at room temperature and above with Hall and Seebeck coefficient measurements. The first order non-parabolicity approximation was used to show that holes contribute a higher thermoelectric power compared to that of electrons in agreement with recent theoretical band structure calculations. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:5 / 8
页数:4
相关论文
共 15 条
  • [1] Askerov B., 1994, ELECT TRANSPORT PHEN
  • [2] Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator
    Chen, Y. L.
    Chu, J. -H.
    Analytis, J. G.
    Liu, Z. K.
    Igarashi, K.
    Kuo, H. -H.
    Qi, X. L.
    Mo, S. K.
    Moore, R. G.
    Lu, D. H.
    Hashimoto, M.
    Sasagawa, T.
    Zhang, S. C.
    Fisher, I. R.
    Hussain, Z.
    Shen, Z. X.
    [J]. SCIENCE, 2010, 329 (5992) : 659 - 662
  • [3] Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping
    Choi, Y. H.
    Jo, N. H.
    Lee, K. J.
    Lee, H. W.
    Jo, Y. H.
    Kajino, J.
    Takabatake, T.
    Ko, K. -T.
    Park, J. -H.
    Jung, M. H.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (15)
  • [4] Goldsmid H.J., 2010, INTRO THERMOELECTRIC, P35
  • [5] p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications
    Hor, Y. S.
    Richardella, A.
    Roushan, P.
    Xia, Y.
    Checkelsky, J. G.
    Yazdani, A.
    Hasan, M. Z.
    Ong, N. P.
    Cava, R. J.
    [J]. PHYSICAL REVIEW B, 2009, 79 (19)
  • [6] Hyde G.R., 1972, J PHYS CHEM SOLIDS, V35, P1719
  • [7] Hexagonally Deformed Fermi Surface of the 3D Topological Insulator Bi2Se3
    Kuroda, K.
    Arita, M.
    Miyamoto, K.
    Ye, M.
    Jiang, J.
    Kimura, A.
    Krasovskii, E. E.
    Chulkov, E. V.
    Iwasawa, H.
    Okuda, T.
    Shimada, K.
    Ueda, Y.
    Namatame, H.
    Taniguchi, M.
    [J]. PHYSICAL REVIEW LETTERS, 2010, 105 (07)
  • [8] Landolt-Bornstein, 1983, SEMICONDUCTORS, V17
  • [9] Conduction band splitting and transport properties of Bi2Se3
    Navrátil, J
    Horák, J
    Plechácek, T
    Kamba, S
    Lost'ák, P
    Dyck, JS
    Chen, W
    Uher, C
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 2004, 177 (4-5) : 1704 - 1712
  • [10] Potential Thermoelectric Performance from Optimization of Hole-Doped Bi2Se3
    Parker, David
    Singh, David J.
    [J]. PHYSICAL REVIEW X, 2011, 1 (02): : 1 - 9