Robust p-type behavior in polycrystalline, ball-milled, magnesium-doped Bi2Se3

被引：8

作者：

Androulakis, J. ^{[1
]}

Beciragic, E. ^{[1
]}

机构：

[1] Gentherm Inc, Azusa, CA 91702 USA

来源：

SOLID STATE COMMUNICATIONS | 2013年 / 173卷

关键词：

Thermoelectric material; Semiconductors; Ball-milling; Effective mass; CONDUCTION-BAND; SURFACE;

D O I：

10.1016/j.ssc.2013.08.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study polycrystalline pellets of magnesium doped Bi2Se3 compacted from powders processed with planetary milling, a high energy crude metallurgical method. We present evidence that the specimens are p-type and that hole conduction is robust over a wide temperature range. The p-type behavior was probed at room temperature and above with Hall and Seebeck coefficient measurements. The first order non-parabolicity approximation was used to show that holes contribute a higher thermoelectric power compared to that of electrons in agreement with recent theoretical band structure calculations. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：5 / 8

页数：4

共 15 条

[1]

Askerov B., 1994, ELECT TRANSPORT PHEN

[2] Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator [J].

Chen, Y. L. ;

Chu, J. -H. ;

Analytis, J. G. ;

Liu, Z. K. ;

Igarashi, K. ;

Kuo, H. -H. ;

Qi, X. L. ;

Mo, S. K. ;

Moore, R. G. ;

Lu, D. H. ;

Hashimoto, M. ;

Sasagawa, T. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. X. .

SCIENCE, 2010, 329 (5992) :659-662

[3] Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping [J].

Choi, Y. H. ;

Jo, N. H. ;

Lee, K. J. ;

Lee, H. W. ;

Jo, Y. H. ;

Kajino, J. ;

Takabatake, T. ;

Ko, K. -T. ;

Park, J. -H. ;

Jung, M. H. .

APPLIED PHYSICS LETTERS, 2012, 101 (15)

[4]

Goldsmid H.J., 2010, INTRO THERMOELECTRIC, P35

[5] p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications [J].

Hor, Y. S. ;

Richardella, A. ;

Roushan, P. ;

Xia, Y. ;

Checkelsky, J. G. ;

Yazdani, A. ;

Hasan, M. Z. ;

Ong, N. P. ;

Cava, R. J. .

PHYSICAL REVIEW B, 2009, 79 (19)

[6]

Hyde G.R., 1972, J PHYS CHEM SOLIDS, V35, P1719

[7] Hexagonally Deformed Fermi Surface of the 3D Topological Insulator Bi2Se3 [J].

Kuroda, K. ;

Arita, M. ;

Miyamoto, K. ;

Ye, M. ;

Jiang, J. ;

Kimura, A. ;

Krasovskii, E. E. ;

Chulkov, E. V. ;

Iwasawa, H. ;

Okuda, T. ;

Shimada, K. ;

Ueda, Y. ;

Namatame, H. ;

Taniguchi, M. .

PHYSICAL REVIEW LETTERS, 2010, 105 (07)

[8]

Landolt-Bornstein, 1983, SEMICONDUCTORS, V17

[9] Conduction band splitting and transport properties of Bi2Se3 [J].

Navrátil, J ;

Horák, J ;

Plechácek, T ;

Kamba, S ;

Lost'ák, P ;

Dyck, JS ;

Chen, W ;

Uher, C .

JOURNAL OF SOLID STATE CHEMISTRY, 2004, 177 (4-5) :1704-1712

[10] Potential Thermoelectric Performance from Optimization of Hole-Doped Bi2Se3 [J].

Parker, David ;

Singh, David J. .

PHYSICAL REVIEW X, 2011, 1 (02) :1-9

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