Thick-film resistor quality indicator based on noise index measurements

被引：19
作者：
Jevtic, MM
Mrak, I
Stanimirovic, Z
机构：
[1] Inst Phys, YU-11080 Belgrade, Zemun, Yugoslavia
[2] Telecommun & Elect Inst IRITEL, YU-11080 Belgrade, Zemun, Yugoslavia
来源：
MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 12期
关键词：
thick-film resistors; noise index; noise reduced mobility; quality indicator;
D O I：
10.1016/S0026-2692(99)00050-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A quality indicator for thick-film resistors based on noise index and resistance measurements is proposed. As this correlates resistor transport and noise characteristics and has mobility dimensions, we titled it to be noise reduced mobility. The experimental results for thick-film resistors, realized using three different resistor compositions with sheet resistances of 1, 10 and 100 k Omega/sqr show that layers with sheet resistance of 10 k Omega/sqr have minimum value of noise reduced mobility in comparison with layers formed using resistor compositions with sheet resistances of 1 and 100 k Omega/sqr. The potential and resistance distributions measured along test resistors show that the noise reduced mobility is in correlation with thick-film inhomogeneity. (C) 1999 Elsevier Science Ltd. All rights reserved.
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收藏
页码：1255 / 1259
页数：5
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