On the modeling of the transient thermal behavior of semiconductor devices

被引：60
作者：
Rinaldi, N [1 ]
机构：
[1] Univ Naples Federico II, Dept Elect & Telecommun Engn, I-80125 Naples, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 12期
关键词：
electrothermal effects; semiconductor device modeling; temperature;
D O I：
10.1109/16.974706
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A mathematical model of the transient temperature response of integrated devices is presented which takes into account the three-dimensional (3-D) nature of heat flow and the physical structure of the device. Simple analytical relations for the transient thermal impedance and thermal time constants are derived for the first time. The impact of device geometry on the transient thermal response curve is discussed, and simple giudelines for the thermal design of solid-state devices operated in transient or pulsed regime are given.
引用
收藏
页码：2796 / 2802
页数：7
相关论文
共 28 条
[1]   Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part I: Fundamentals and theory [J].
Bagnoli, PE ;
Casarosa, C ;
Ciampi, M ;
Dallago, E .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1998, 13 (06) :1208-1219
[2]   Electro-thermal device and circuit simulation with thermal nonlinearity due to temperature dependent diffusivity [J].
Batty, W ;
Snowden, CM .
ELECTRONICS LETTERS, 2000, 36 (23) :1966-1968
[3]   Electrothermal modeling and measurement for spatial power combining at millimeter wavelengths [J].
Batty, W ;
Panks, AJ ;
Johnson, RG ;
Snowden, CM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (12) :2574-2585
[4]  
BONANI F, 1994, P IEEE GAAS IC S, P141
[5]  
Cheng Y.-K., 2000, Electrothermal Analysis of VLSI Systems
[6]  
CHRISTIAENS F, 1996, P 46 EL COMP TECHN C, P154
[7]  
Clemente S., 1993, IEEE Transactions on Power Electronics, V8, P337, DOI 10.1109/63.261001
[8]   LOCAL THERMAL EFFECTS IN HIGH-PERFORMANCE BIPOLAR-DEVICES CIRCUITS [J].
DENNISON, RT ;
WALTER, KM .
PROCEEDINGS OF THE 1989 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, 1989, :164-167
[9]   Transient analysis of collector current collapse in multifinger HBT's [J].
Dhondt, F ;
Barrette, J ;
Rolland, PA .
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (08) :272-274
[10]   Fully coupled dynamic electro-thermal simulation [J].
Digele, G ;
Lindenkreuz, S ;
Kasper, E .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 1997, 5 (03) :250-257
123