Effects of Temperature on Current Crowding of GaN-Based Light-Emitting Diodes

被引：11

作者：

Jung, Eunjin ^{[1
]}

Kim, Seongjun ^{[1
]}

Kim, Hyunsoo ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

关键词：

Current crowding; light-emitting diode (LED); EFFICIENCY;

D O I：

10.1109/LED.2012.2228841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of temperature on the current crowding of GaN-based light-emitting diodes (LEDs) were investigated. At 300 K, LEDs fabricated with transparent ITO contacts on the p-layer (ITO-LEDs) showed a larger effective active area ratio (A(r)) of 0.69, compared to 0.57 for LEDs fabricated with a reflective Ag contact. However, the A(r) for ITO-LEDs decreased more rapidly with increasing temperature (0.28 at 440 K) than that for Ag-LEDs (0.31) due to the ITO-LEDs' higher junction temperature associated with a larger series resistance, resulting in a consistent and rapid drop of optical output power.

引用

页码：277 / 279

页数：3

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