Effects of Temperature on Current Crowding of GaN-Based Light-Emitting Diodes

被引：11

作者：

Jung, Eunjin ^{[1
]}

Kim, Seongjun ^{[1
]}

Kim, Hyunsoo ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

关键词：

Current crowding; light-emitting diode (LED); EFFICIENCY;

D O I：

10.1109/LED.2012.2228841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of temperature on the current crowding of GaN-based light-emitting diodes (LEDs) were investigated. At 300 K, LEDs fabricated with transparent ITO contacts on the p-layer (ITO-LEDs) showed a larger effective active area ratio (A(r)) of 0.69, compared to 0.57 for LEDs fabricated with a reflective Ag contact. However, the A(r) for ITO-LEDs decreased more rapidly with increasing temperature (0.28 at 440 K) than that for Ag-LEDs (0.31) due to the ITO-LEDs' higher junction temperature associated with a larger series resistance, resulting in a consistent and rapid drop of optical output power.

引用

页码：277 / 279

页数：3

共 19 条

[1]

[Anonymous], APPL PHYS LETT

[2]

[Anonymous], APPL PHYS LETT

[3]

[Anonymous], APPL PHYS EXP

[4]

[Anonymous], 2006, LIGHT EMITTING DIODE, DOI DOI 10.1017/CBO9780511790546

[5] Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes [J].

Arif, Ronald A. ;

Ee, Yik-Khoon ;

Tansu, Nelson .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[6] Modeling and circuit simulation of GaN-based light emitting diodes for optimum efficiency through uniform current spreading. [J].

Ebong, A ;

Arthur, S ;

Downey, E ;

Stokes, EB ;

Cao, XA ;

LeBoeuf, S ;

Sandvik, PM ;

Walker, D .

SOLID STATE LIGHTING II, 2002, 4776 :187-194

[7] InGaN blue light-emitting diodes with optimized n-GaN layer [J].

Eliashevich, I ;

Li, YX ;

Osinsky, A ;

Tran, CA ;

Brown, MG ;

Karlicek, RF .

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS III, 1999, 3621 :28-36

[8] Current crowding in GaN/InGaN light emitting diodes on insulating substrates [J].

Guo, X ;

Schubert, EF .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4191-4195

[9] Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates [J].

Guo, X ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 2001, 78 (21) :3337-3339

[10] Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodes [J].

Han, Dongpyo ;

Shim, Jongin ;

Shin, Dong-Soo ;

Nam, Eunsoo ;

Park, Hyungmoo .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)

← 1 2 →