Role of water in the tribochemical removal of bare silicon

被引:39
作者
Chen, Cheng [1 ]
Xiao, Chen [1 ]
Wang, Xiaodong [2 ]
Zhang, Peng [1 ]
Chen, Lei [1 ]
Qi, Yaqiong [1 ]
Qian, Linmao [1 ]
机构
[1] Southwest Jiaotong Univ, Natl Tract Power Lab, Tribol Res Inst, Chengdu 610031, Peoples R China
[2] Jiangsu Univ, Ctr Micro Nano Sci & Technol, Zhenjiang 212013, Peoples R China
基金
中国国家自然科学基金;
关键词
Nanowear; Bare silicon; Water; Tribochemical wear; Humidity; ATOMIC-FORCE MICROSCOPY; MONOCRYSTALLINE SILICON; HYDROFLUORIC-ACID; CAPILLARY FORCE; SURFACE; MECHANISM; HUMIDITY; WEAR; HYDROXYLATION; TEMPERATURE;
D O I
10.1016/j.apsusc.2016.08.175
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanowear tests of bare silicon against a SiO2 microsphere were conducted in air (relative humidity [RH] = 0%-89%) and water using an atomic force microscope. Experimental results revealed that the water played an important role in the tribochemical wear of the bare silicon. A hillock-like wear trace with a height of 0.7 nm was generated on the bare silicon surface in dry air. As the RH increased, the wear depth increased and reached the maximum level in water. Analysis of frictional dissipated energy suggested that the wear of the bare silicon was not dominated by mechanical interactions. High-resolution transmission electron microscopy detection demonstrated that the silicon atoms and crystal lattice underneath the worn area maintained integral perfectly and thus further confirmed the tribochemical wear mechanism of the bare silicon. Finally, the role of water in the tribochemical wear of the bare silicon may be explained by the following three aspects: the hydroxylation by hydroxyl ions auto-ionized in water, the hydrolytic reaction of water molecules, and the dissolution of the tribochemical product SiOmHn, in liquid water. With increasing RH, a greater water amount would adsorb to the Si/SiO2 interface and induce a more serious tribochemical wear on the bare silicon surface. The results of this paper may provide further insight into the tribochemical removal mechanism of bare monocrystalline silicon and furnish the wider reaction cognition for chemical mechanical polishing. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:696 / 702
页数:7
相关论文
共 39 条
[11]  
GRAF D, 1989, J VAC SCI TECHNOL A, V7, P808, DOI 10.1116/1.575845
[12]   Effect of hydrofluoric acid in oxidizing acid mixtures on the hydroxylation of silicon surface [J].
Guhathakurta, Sanjukta ;
Subramanian, Anuradha .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (11) :P136-P146
[13]   Spectroscopic investigations of hydrogen termination, oxide coverage, roughness, and surface state density of silicon during native oxidation in air [J].
Henrion, W ;
Rebien, M ;
Angermann, H ;
Röseler, A .
APPLIED SURFACE SCIENCE, 2002, 202 (3-4) :199-205
[14]  
Howatson A.M., 1991, ENG TABLES DATA
[15]   Effects of gas adsorption isotherm and liquid contact angle on capillary force for sphere-on-flat and cone-on-flat geometries [J].
Hsiao, Erik ;
Marino, Matthew J. ;
Kim, Seong H. .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2010, 352 (02) :549-557
[16]   Study of friction and wear with AFM in CMP process of selective layer [J].
Ilie, F. .
TRIBOLOGY-MATERIALS SURFACES & INTERFACES, 2013, 7 (04) :211-215
[17]   Atomic force microscopy studies of chemical-mechanical processes on silicon(100) surfaces [J].
Imoto, R. ;
Stevens, F. ;
Langford, S. C. ;
Dickinson, J. T. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 94 (01) :35-43
[18]  
Jackson MarkJ., 2005, MICROFABRICATION NAN
[19]   Adhesion forces between glass and silicon surfaces in air studied by AFM: Effects of relative humidity, particle size, roughness, and surface treatment [J].
Jones, R ;
Pollock, HM ;
Cleaver, JAS ;
Hodges, CS .
LANGMUIR, 2002, 18 (21) :8045-8055
[20]   The atomic-scale removal mechanism during Si tip scratching on Si and SiO2 surfaces in aqueous KOH with an atomic force microscope [J].
Katsuki, F ;
Saguchi, A ;
Takahashi, W ;
Watanabe, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (7B) :4919-4923