An atomic-scale view of semiconductor heterostructures using scanning tunneling microscopy

被引：0

作者：

Yu, ET ^{[1
]}

Zuo, SL ^{[1
]}

Lew, AY ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the characteristic dimensions of advanced semiconductor devices:es approach the nanometer scale, characterization at or near the atomic scale is emerging as an essential aspect of materials and device engineering. We have used cross-sectional scanning tunneling microscopy to elucidate atomicscale structure, and its correlation with material properties and device behavior, in a variety of III-V semiconductor heterostructures. A few representative examples of our recent work in this area are presented, with emphasis on quantitative characterization of atomicscale interface roughness and its correlation with tr;transport properties in InAs/Ga1-xInxSb superlattices, and on atomic-scale compositional structure of alloys in InAsxP1-x/InP and InAs(1-x)P(x)lnAs(1-y)Sb(y) heterostructures.

引用

页码：657 / 660

页数：4

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