An atomic-scale view of semiconductor heterostructures using scanning tunneling microscopy

被引：0
|
作者：
Yu, ET [1 ]
Zuo, SL [1 ]
Lew, AY [1 ]
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICSICT.1998.785975
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As the characteristic dimensions of advanced semiconductor devices:es approach the nanometer scale, characterization at or near the atomic scale is emerging as an essential aspect of materials and device engineering. We have used cross-sectional scanning tunneling microscopy to elucidate atomicscale structure, and its correlation with material properties and device behavior, in a variety of III-V semiconductor heterostructures. A few representative examples of our recent work in this area are presented, with emphasis on quantitative characterization of atomicscale interface roughness and its correlation with tr;transport properties in InAs/Ga1-xInxSb superlattices, and on atomic-scale compositional structure of alloys in InAsxP1-x/InP and InAs(1-x)P(x)lnAs(1-y)Sb(y) heterostructures.
引用
收藏
页码：657 / 660
页数：4
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