Electrical properties of amorphous Ge15Se60M25 where (M = As or Sn or Bi) films

被引：25

作者：

Afifi, M. A. ^{[1
]}

Hegab, N. A. ^{[1
]}

Atyia, H. E. ^{[1
]}

Ismael, M. I. ^{[1
]}

机构：

[1] Ain Shams Univ, Fac Educ, Dept Phys, Cairo, Egypt

来源：

VACUUM | 2008年 / 83卷 / 02期

关键词：

Switching phenomenon; Conductivity; GeSe films;

D O I：

10.1016/j.vacuum.2008.05.034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film samples were prepared from the synthesized amorphous Ge15Se60M25 (where M = Sn or As or Bi) chalcogenide glass compositions by thermal evaporation technique. X-ray analysis shows the amorphous nature of the obtained films. The dc-electrical conductivity was studied for different thicknesses (89-903 nm) as function of temperature in the range (303-413 K) below T-g (glass transition temperature). The obtained results showed that the conduction activation energy has two values indicating the presence of two conduction mechanisms through the investigated range of temperature which can be explained in accordance with Mott and Davis model. The current-voltage characteristics of the investigated samples present a switching phenomenon of memory type. The mean value of the threshold switching voltage (V) over bar (th) increases linearly with increasing film thickness and decreases exponentially with temperature in the investigated range below Tg. The obtained results are explained in accordance with the electrothermal model for the switching process. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：326 / 331

页数：6

共 30 条

[1] Memory switching of germanium tellurium amorphous semiconductor [J].