Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation

被引：3

作者：

Stepanov, A. L. ^{[1
]}

Batalov, R., I ^{[1
]}

Bayazitov, R. M. ^{[1
]}

Rogov, A. M. ^{[2
]}

机构：

[1] RAS, FCR Kazan Sci Ctr, Zavoisky Phys Tech Inst, Kazan 420029, Russia

[2] Kazan Fed Univ, Kazan 420008, Russia

来源：

VACUUM | 2020年 / 182卷

基金：

俄罗斯科学基金会;

关键词：

Ion implantation; Silver nanoparticles; Silicon; Pulse ion annealing; POROUS SILICON; PLASMONICS; SI;

D O I：

10.1016/j.vacuum.2020.109724

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper presents the results of Si surface modification created by implantation with Ag+ ions at energy of 30 key, current density of 8 mu A/cm(2) for various doses from 6.0 center dot 10(15) to 7.5 center dot 10(16) ion/cm(2) and annealed by powerful beam pulses (C+, H+) of nanosecond duration. Scanning electron microscopy and optical reflection measurements showed that after ion implantation an amorphous a-Si layer on the surface of c-Si substrates with Ag nanoparticles was formed. Followed pulse ion beam annealing of sample obtained at lowest dose of 6.0 center dot 10(15) ion/cm(2) leads to melting and recrystallization of the Si surface layer with segregation of Ag nanoparticles. For samples implanted with doses higher than 2.5 center dot 10(16) ion/cm(2) after annealing an epitaxial cellular breakdown structures are fabricated on the Si surface decorated at the cell boundaries by Ag nanoparticles.

引用

页数：4

共 23 条

[1]

Amelinckx S., 1964, SOLOD STATE PHYS S, V6

[2]

Atwater HA, 2010, NAT MATER, V9, P205, DOI [10.1038/NMAT2629, 10.1038/nmat2629]

[3] Pulsed laser annealing of high-dose Ag+-ion implanted Si layer [J].

Batalov, R. I. ;

Nuzhdin, V. I. ;

Valeev, V. F. ;

Vorobev, V. V. ;

Osin, Yu N. ;

Ivlev, G. D. ;

Stepanov, A. L. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (01)

[4] Formation of heavily doped semiconductor layers by pulsed ion beam treatment [J].

Bayazitov, RM ;

Zakirzyanova, LK ;

Khaibullin, IB ;

Remnev, GE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 122 (01) :35-38

[5] PULSED PARTICLE BEAM TREATMENT OF IMPLANTED SILICON [J].

BAYAZITOV, RM ;

ZAKIRZYANOVA, LK ;

KHAIBULLIN, IB ;

ISAKOV, IF ;

CHACHAKOV, AF .

VACUUM, 1992, 43 (5-7) :619-622

[6] ANALYSIS OF REFLECTIVITY SPECTRA OF SILICON IMPLANTED WITH 70 KEV B, SI, AND AG IONS [J].

CZARNECKASUCH, E ;

KISIEL, A .

SURFACE SCIENCE, 1988, 193 (1-2) :221-234

[7]

Dhoubhadel MS, 2014, AIP CONF PROC, V1607, P16, DOI [10.1063/1.4890698, 10.1063/14890698]

[8] EFFECT OF NONEQUILIBRIUM INTERFACE KINETICS ON CELLULAR BREAKDOWN OF PLANAR INTERFACES DURING RAPID SOLIDIFICATION OF SI-SN [J].

HOGLUND, DE ;

AZIZ, MJ ;

STIFFLER, SR ;

THOMPSON, MO ;

TSAO, JY ;

PEERCY, PS .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :107-112

[9] Photodetection with Active Optical Antennas [J].

Knight, Mark W. ;

Sobhani, Heidar ;

Nordlander, Peter ;

Halas, Naomi J. .

SCIENCE, 2011, 332 (6030) :702-704

[10]

Kreibig U., 1995, OPTICAL PROPERTIES M, P533

← 1 2 3 →