Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mossbauer spectroscopy

被引：28

作者：

Gunnlaugsson, HP ^{[1
]}

Weyer, G

Dietrich, M

Fanciulli, M

Bharuth-Ram, K

Sielemann, R

机构：

[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark

[2] CERN, Div EP, CH-1211 Geneva, Switzerland

[3] INFM, Lab MDM, I-20041 Agrate Brianza, Italy

[4] Univ Durban Westville, Dept Phys, ZA-4000 Durban, South Africa

[5] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期

关键词：

D O I：

10.1063/1.1469216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interstitial Fe-57m atoms excited in the 14.4 keV Mossbauer state have been created in silicon at 400-800 K as a result of the recoil imparted on these daughter atoms in the beta(-) decay of ion-implanted, substitutional Mn-57. Diffusional jumps of the interstitial Fe-57m cause a line broadening in their Mossbauer spectra, which is directly proportional to their diffusivity. Thus, the charge-state-dependent diffusivity has been determined in differently doped material. (C) 2002 American Institute of Physics.

引用

页码：2657 / 2659

页数：3

共 20 条

[1] IMPACT OF THE ELECTRONIC-STRUCTURE ON THE SOLUBILITY AND DIFFUSION OF 3D TRANSITION-ELEMENTS IN SILICON [J].

GILLES, D ;

SCHROTER, W ;

BERGHOLZ, W .

PHYSICAL REVIEW B, 1990, 41 (09) :5770-5782

[2] Detection of diffusional jumps of interstitial Fe in silicon by Mossbauer spectroscopy [J].

Gunnlaugsson, HP ;

Dietrich, M ;

Fanciulli, M ;

Bharuth-Ram, K ;

Sielemann, R ;

Weyer, G .

PHYSICA B-CONDENSED MATTER, 2001, 308 :418-420

[3] 57Fe Mossbauer study of radiation damage in ion-implanted Si, SiGe and SiSn [J].

Gunnlaugsson, HP ;

Fanciulli, M ;

Dietrich, M ;

Bharuth-Ram, K ;

Sielemann, R ;

Weyer, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 (1-4) :55-60

[4]

GUNNLAUGSSON HP, IN PRESS PHYSICA SCR

[5] CHARGE-STATE-DEPENDENT DIFFUSION AND CARRIER-EMISSION-LIMITED DRIFT OF IRON IN SILICON [J].

HEISER, T ;

MESLI, A .

PHYSICAL REVIEW LETTERS, 1992, 68 (07) :978-981

[6] Iron diffusivity in silicon: Impact of charge state - Comment [J].

Heiser, T ;

Mesli, A .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1868-1869

[7] Iron contamination in silicon technology [J].

Istratov, AA ;

Hieslmair, H ;

Weber, ER .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (05) :489-534

[8] Iron and its complexes in silicon [J].

Istratov, AA ;

Hieslmair, H ;

Weber, ER .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (01) :13-44

[9] EFFECT OF DECAYING ATOMIC STATES ON INTEGRAL AND TIME DIFFERENTIAL MOSSBAUER-SPECTRA [J].

KANKELEIT, E .

ZEITSCHRIFT FUR PHYSIK A-HADRONS AND NUCLEI, 1975, 275 (02) :119-121

[10] Iron diffusivity in silicon: Impact of charge state - Reply [J].

Koveshnikov, S ;

Rozgonyi, G .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1870-1871

← 1 2 →