High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader

被引:10
作者
Lindberg, H [1 ]
Strassner, M
Bengtsson, J
Larsson, A
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden
[2] Royal Inst Technol, Lab Mat & Semicond Phys, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden
关键词
external cavity; heat spreader; high-power laser; InGaAsP; optical pumping; semiconductor laser; surface-emitting laser; vertical cavity;
D O I
10.1109/LPT.2004.826235
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an optically pumped 1550-nm vertical-external-cavity surface-emitting laser with improved output power and operating temperature using a bonded heat spreader. The laser comprises an InGaAsP-based gain element, with a resonant periodic gain structure on top of a distributed Bragg reflector, and a high reflectivity spherical mirror as the external reflector. Heat transport is enhanced by a Si heat spreader bonded to the InGaAsP surface by liquid capillary bonding. Optical pumping is achieved using a 1250-nm fiber Raman laser. A maximum continuous output power of 250 mW was obtained under multitransverse mode operation at 240 K. Under operation in the fundamental near-Gaussian mode, we obtained a maximum power of 230 mW with a beam quality factor (M-2) of 1.22. At room temperature, the output power was limited to 12 mW.
引用
收藏
页码:1233 / 1235
页数:3
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