Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation.

被引：0

作者：

Zschaetzsch, G. ^{[1
]}

Vandervorst, W.

Hoffmann, T. ^{[1
]}

Goossens, J. ^{[1
]}

Everaert, J. -L. ^{[1
]}

Borniquel, J. I. del Agua ^{[2
]}

Poon, T. ^{[2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Appl Mat Inc, Sunnyvale, CA 94087 USA

来源：

ION IMPLANTATION TECHNOLOGY 2008 | 2008年 / 1066卷

关键词：

PIII; plasma immersion ion implantation; BF3; SIMS; Boron activation; Laser annealing; sheet resistance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study investigates the basic aspects of junction formation using Plasma Immersion Ion Implantation using BF3 and addresses the role of (pre)amorphization, C(F)-co-implantation, plasma parameters (bias, dose) and the thermal anneal cycle (spike versus msec laser anneal). The basic physics are studied using Secondary Ion Mass Spectrometry, sheet resistance and using four point probe and RsL. Profiles with junction depths ranging from 10-12 nm and sheet resistance values below 800 Ohm/sq are readily achievable.

引用

页码：461 / +

页数：2

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