Strain relaxation in epitaxial SrRuO3 thin films on LaAlO3 substrates

被引：11
|
作者：
Gao, M. [1 ]
Du, H. [1 ]
Ma, C. R. [2 ,3 ,4 ]
Liu, M. [2 ,3 ,4 ]
Collins, G. [2 ,3 ,4 ]
Zhang, Y. M. [2 ,3 ,4 ]
Dai, C. [1 ]
Chen, C. L. [2 ,3 ,4 ]
Lin, Y. [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
[2] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
[3] Univ Houston, Dept Phys, Houston, TX 77204 USA
[4] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 14期
基金：
美国国家科学基金会; 中国国家自然科学基金;
关键词：
DIELECTRIC-PROPERTIES; TRANSPORT-PROPERTIES; ELECTRONIC-STRUCTURE; FERROELECTRICITY; ENHANCEMENT; BEHAVIOR; AXIS;
D O I：
10.1063/1.4823593
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strain relaxation behavior of epitaxial SrRuO3 thin films on (001) LaAlO3 substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO3 thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes. (C) 2013 AIP Publishing LLC.
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页数：4
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