Electrostatic field effects on three-dimensional topological insulators

被引:19
作者
Yang Wen-Min [1 ]
Lin Chao-Jing [1 ]
Liao Jian [1 ]
Li Yong-Qing [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
topological insulator; electron transport; weak localization; surface and interface; SINGLE DIRAC CONE; WEAK ANTILOCALIZATION; QUANTUM OSCILLATIONS; SURFACE-STATES; BERRYS PHASE; THIN-FILMS; TRANSPORT; BI2SE3; CONDUCTION; LOCALIZATION;
D O I
10.1088/1674-1056/22/9/097202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Three-dimensional topological insulators are a new class of quantum matter which has interesting connections to nearly all main branches of condensed matter physics. In this article, we briefly review the advances in the field effect control of chemical potential in three-dimensional topological insulators. It is essential to the observation of many exotic quantum phenomena predicted to emerge from the topological insulators and their hybrid structures with other materials. We also describe various methods for probing the surface state transport. Some challenges in experimental study of electron transport in topological insulators will also be briefly discussed.
引用
收藏
页数:9
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