Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers

被引：25

作者：

Simmonds, Paul J. ^{[1
]}

Laghumavarapu, Ramesh Babu ^{[2
]}

Sun, Meng ^{[2
]}

Lin, Andrew ^{[2
]}

Reyner, Charles J. ^{[2
]}

Liang, Baolai ^{[1
]}

Huffaker, Diana L. ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 24期

关键词：

INTERMEDIATE BAND; ACCURATE CONTROL; SOLAR-CELL; GROWTH; EFFICIENCY; INGAAS;

D O I：

10.1063/1.4729419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the effect of GaAs1-xSbx cladding layer composition on the growth and properties of InAs self-assembled quantum dots surrounded by AlAs0.56Sb0.44 barriers. Lowering Sb-content in the GaAs1-xSbx improves the morphology of the InAs quantum dots and reduces cladding layer alloy fluctuations. The result is a dramatic increase in photoluminescence intensity from the InAs quantum dots, with a peak at 0.87 eV. The emission energy exhibits a cube root dependence on excitation power, consistent with the type-II band alignment of the quantum dots. The characteristics of this quantum dot system show promise for applications such as intermediate band solar cells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729419]

引用

页数：5

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