Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

被引：174

作者：

Kioupakis, Emmanouil ^{[1
,2
]}

Yan, Qimin ^{[1
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

基金：

美国国家科学基金会;

关键词：

We thank J. Speck; C; Weisbuch; and A. Alkauskas for useful discussions. E.K. was supported as part of the Center for Energy Efficient Materials; an Energy Frontier Research Center funded by the U.S. DOE; BES under Award No. DE-SC0001009. Q.Y. was supported by the UCSB Solid State Lighting and Energy Center. Computational resources were provided by the Center for Scientific Computing at the CNSI and MRL (an NSF MRSEC; DMR-1121053) (NSF CNS-0960316); and the DOE NERSC Facility (DE-AC02-05CH11231);

D O I：

10.1063/1.4769374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use theoretical modeling to investigate the effect of polarization fields and non-radiative Auger recombination on the efficiency-droop and green-gap problems of polar and nonpolar nitride light-emitting diodes. The dependence of radiative and nonradiative recombination rates on electron-hole wave-function overlap is analyzed. Device designs that minimize the polarization fields lead to higher efficiency, not because the internal quantum efficiency is improved at a given carrier density but because they can be operated at a lower carrier density for a given current density. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769374]

引用

页数：4

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