Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

被引：174
|
作者：
Kioupakis, Emmanouil [1 ,2 ]
Yan, Qimin [1 ]
Van de Walle, Chris G. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期
基金：
美国国家科学基金会;
关键词：
We thank J. Speck; C; Weisbuch; and A. Alkauskas for useful discussions. E.K. was supported as part of the Center for Energy Efficient Materials; an Energy Frontier Research Center funded by the U.S. DOE; BES under Award No. DE-SC0001009. Q.Y. was supported by the UCSB Solid State Lighting and Energy Center. Computational resources were provided by the Center for Scientific Computing at the CNSI and MRL (an NSF MRSEC; DMR-1121053) (NSF CNS-0960316); and the DOE NERSC Facility (DE-AC02-05CH11231);
D O I：
10.1063/1.4769374
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We use theoretical modeling to investigate the effect of polarization fields and non-radiative Auger recombination on the efficiency-droop and green-gap problems of polar and nonpolar nitride light-emitting diodes. The dependence of radiative and nonradiative recombination rates on electron-hole wave-function overlap is analyzed. Device designs that minimize the polarization fields lead to higher efficiency, not because the internal quantum efficiency is improved at a given carrier density but because they can be operated at a lower carrier density for a given current density. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769374]
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页数：4
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