Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

被引：178

作者：

Kioupakis, Emmanouil ^{[1
,2
]}

Yan, Qimin ^{[1
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

基金：

美国国家科学基金会;

关键词：

Augers - Efficiency - Carrier concentration - Light emitting diodes - III-V semiconductors - Polarization - Wave functions;

D O I：

10.1063/1.4769374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use theoretical modeling to investigate the effect of polarization fields and non-radiative Auger recombination on the efficiency-droop and green-gap problems of polar and nonpolar nitride light-emitting diodes. The dependence of radiative and nonradiative recombination rates on electron-hole wave-function overlap is analyzed. Device designs that minimize the polarization fields lead to higher efficiency, not because the internal quantum efficiency is improved at a given carrier density but because they can be operated at a lower carrier density for a given current density. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769374]

引用

页数：4

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