Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

被引：174

作者：

Kioupakis, Emmanouil ^{[1
,2
]}

Yan, Qimin ^{[1
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

基金：

美国国家科学基金会;

关键词：

We thank J. Speck; C; Weisbuch; and A. Alkauskas for useful discussions. E.K. was supported as part of the Center for Energy Efficient Materials; an Energy Frontier Research Center funded by the U.S. DOE; BES under Award No. DE-SC0001009. Q.Y. was supported by the UCSB Solid State Lighting and Energy Center. Computational resources were provided by the Center for Scientific Computing at the CNSI and MRL (an NSF MRSEC; DMR-1121053) (NSF CNS-0960316); and the DOE NERSC Facility (DE-AC02-05CH11231);

D O I：

10.1063/1.4769374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use theoretical modeling to investigate the effect of polarization fields and non-radiative Auger recombination on the efficiency-droop and green-gap problems of polar and nonpolar nitride light-emitting diodes. The dependence of radiative and nonradiative recombination rates on electron-hole wave-function overlap is analyzed. Device designs that minimize the polarization fields lead to higher efficiency, not because the internal quantum efficiency is improved at a given carrier density but because they can be operated at a lower carrier density for a given current density. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769374]

引用

页数：4

共 50 条

[1] Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
Kioupakis, Emmanouil
Rinke, Patrick
Delaney, Kris T.
Van de Walle, Chris G.
APPLIED PHYSICS LETTERS, 2011, 98 (16)
[2] The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes
Vaxenburg, Roman
Rodina, Anna
Lifshitz, Efrat
Efros, Alexander L.
APPLIED PHYSICS LETTERS, 2013, 103 (22)
[3] Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?
Bulashevich, K. A.
Karpov, S. Yu.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 2066 - +
[4] Efficiency droop in nitride-based light-emitting diodes
Piprek, Joachim
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (10): : 2217 - 2225
[5] Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
Dai, Qi
Shan, Qifeng
Wang, Jing
Chhajed, Sameer
Cho, Jaehee
Schubert, E. Fred
Crawford, Mary H.
Koleske, Daniel D.
Kim, Min-Ho
Park, Yongjo
APPLIED PHYSICS LETTERS, 2010, 97 (13)
[6] Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes
Vaxenburg, R.
Lifshitz, E.
Efros, Al L.
APPLIED PHYSICS LETTERS, 2013, 102 (03)
[7] Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes
Tsai, Y-C
Bayram, C.
Leburton, J-P
JOURNAL OF APPLIED PHYSICS, 2021, 131 (19)
[8] Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes
Tsai, Y. -C.
Bayram, C.
Leburton, J. -P.
JOURNAL OF APPLIED PHYSICS, 2022, 131 (19)
[9] Efficiency droop in light-emitting diodes: Challenges and countermeasures
Cho, Jaehee
Schubert, E. Fred
Kim, Jong Kyu
LASER & PHOTONICS REVIEWS, 2013, 7 (03) : 408 - 421
[10] Efficiency droop in AlGaInP and GaInN light-emitting diodes
Shim, Jong-In
Han, Dong-Pyo
Kim, Hyunsung
Shin, Dong-Soo
Lin, Guan-Bo
Meyaard, David S.
Shan, Qifeng
Cho, Jaehee
Schubert, E. Fred
Shim, Hyunwook
Sone, Cheolsoo
APPLIED PHYSICS LETTERS, 2012, 100 (11)

← 1 2 3 4 5 →