Performance Fluctuations in 10-nm Trigate Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of the Channel Geometry

被引：2

作者：

Granzner, Ralf ^{[1
]}

Schwierz, Frank ^{[1
]}

Engert, Sonja ^{[2
]}

Toepfer, Hannes ^{[2
]}

机构：

[1] Tech Univ Ilmenau, Fachgebiet Festkorperelekt, D-98684 Ilmenau, Germany

[2] Tech Univ Ilmenau, Fachgebiet Theoret Elektrotech, D-98684 Ilmenau, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期

关键词：

MOSFETS; NOISE;

D O I：

10.7567/JJAP.52.04CC19

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Off-current and threshold voltage fluctuations in trigate (TG), and single-gate (SG) silicon-on-insulator (SOI) MOSFETs with a gate length of 10 nm are studied by means of three-dimensional (3D) device simulations. Special emphasis is paid to the role of the channel design. We demonstrate that both geometry fluctuations and the presence of single charged impurities in the active device regions can easily alter the off-currents of SG and TG MOSFET designs that nominally meet the I-on/I-off requirements by more than one order of magnitude. It will be shown that regarding the robustness against geometry fluctuations, neither the SG MOSFET nor one of the possible TG MOSFET designs can be preferred in general. The SG concept, however, turns out to be exceptionally robust against threshold voltage fluctuations caused by single charged impurities. (C) 2013 The Japan Society of Applied Physics

引用

页数：7

共 50 条

[31] Investigation of impact ionization in strained-Si n-channel metal-oxide-semiconductor field-effect transistors
Kang, Ting-Kuo
Huang, Po-Chin
Sa, Yu-Huan
Wu, San-Lein
Chang, Shoou-Jinn
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2664 - 2667
[32] FABRICATION AND CHARACTERIZATION OF COMPACT 100NM SCALE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
REEVES, CM
WIND, SJ
HOHN, FJ
BUCCHIGNANO, JJ
LII, YT
KLAUS, DP
MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 409 - 418
[33] Scaling considerations for high performance 25 nm metal-oxide-semiconductor field effect transistors
Saha, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2240 - 2246
[34] New efficient treatment of impact ionization in submicron metal-oxide-semiconductor field-effect transistors
Fukuda, Koichi, 1600, (31):
[35] IMPACT IONIZATION IN 0.1-MU-M METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
KURATA, H
NARA, Y
SUGII, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (3B): : L345 - L348
[36] NEW EFFICIENT TREATMENT OF IMPACT IONIZATION IN SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
FUKUDA, K
PEIFER, HJ
MEINERZHAGEN, B
THOMA, R
ENGL, WL
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12A): : 3763 - 3769
[37] The impact of gate oxide scaling (3.2-1.2 nm) on sub-100 nm complementary metal-oxide-semiconductor field-effect transistors
Yeh, WK
Lin, CY
THIN SOLID FILMS, 2002, 419 (1-2) : 218 - 224
[38] Gate technology for 70 nm metal-oxide-semiconductor field-effect transistors with ultrathin (<2 nm) oxides
Tennant, D
Klemens, F
Sorsch, T
Baumann, F
Timp, G
Layadi, N
Kornblit, A
Sapjeta, BJ
Rosamilia, J
Boone, T
Weir, B
Silverman, P
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2799 - 2805
[39] A unified functional reliability model for N-channel metal-oxide-semiconductor field-effect transistors with sub 2 nm gate oxide
Lee, Hai-Ming
Du, Long-Jye
Liang, Mong-Song
King, Ya-Ching
Hsu, Charles Ching-Hsiang
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (09): : 5546 - 5550
[40] A unified functional reliability model for N-channel metal-oxide-semiconductor field-effect transistors with sub 2 nm gate oxide
Lee, HM
Du, LJ
Liang, MS
King, YC
Charles, CLM
Hsu, CCH
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (09): : 5546 - 5550

← 1 2 3 4 5 →