Performance Fluctuations in 10-nm Trigate Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of the Channel Geometry

被引：2

作者：

Granzner, Ralf ^{[1
]}

Schwierz, Frank ^{[1
]}

Engert, Sonja ^{[2
]}

Toepfer, Hannes ^{[2
]}

机构：

[1] Tech Univ Ilmenau, Fachgebiet Festkorperelekt, D-98684 Ilmenau, Germany

[2] Tech Univ Ilmenau, Fachgebiet Theoret Elektrotech, D-98684 Ilmenau, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期

关键词：

MOSFETS; NOISE;

D O I：

10.7567/JJAP.52.04CC19

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Off-current and threshold voltage fluctuations in trigate (TG), and single-gate (SG) silicon-on-insulator (SOI) MOSFETs with a gate length of 10 nm are studied by means of three-dimensional (3D) device simulations. Special emphasis is paid to the role of the channel design. We demonstrate that both geometry fluctuations and the presence of single charged impurities in the active device regions can easily alter the off-currents of SG and TG MOSFET designs that nominally meet the I-on/I-off requirements by more than one order of magnitude. It will be shown that regarding the robustness against geometry fluctuations, neither the SG MOSFET nor one of the possible TG MOSFET designs can be preferred in general. The SG concept, however, turns out to be exceptionally robust against threshold voltage fluctuations caused by single charged impurities. (C) 2013 The Japan Society of Applied Physics

引用

页数：7

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