Equipment for processing by gas cluster ion beams

被引:0
作者
Kirkpatrick, A [1 ]
Greer, J [1 ]
机构
[1] Epion Corp, Bedford, MA 01730 USA
来源
APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2 | 1999年 / 475卷
关键词
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Gas cluster ions represent emerging new technology for atomic scale processing of surfaces. Applications which have been recognized for gas cluster ion beams include ultra-shallow implantation, surface cleaning, smoothing and planarization, micromachining, reactive formation of films, and ultra-shallow sputtering for high-resolution surface analysis. Gas cluster ion beam systems for manufacturing applications will require substantially higher beam currents than are presently available and other features which have not been associated with laboratory equipment constructed to date. This paper reviews the status of existing gas cluster ion beam equipment and discusses anticipated requirements for future high-throughput processors.
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页码:405 / 408
页数:4
相关论文
共 6 条
[1]   NUCLEATION AND GROWTH OF CLUSTERS IN EXPANDING NOZZLE FLOWS [J].
HAGENA, OF .
SURFACE SCIENCE, 1981, 106 (1-3) :101-116
[2]   CLUSTER FORMATION IN EXPANDING SUPERSONIC JETS - EFFECT OF PRESSURE, TEMPERATURE, NOZZLE SIZE, AND TEST GAS [J].
HAGENA, OF ;
OBERT, W .
JOURNAL OF CHEMICAL PHYSICS, 1972, 56 (05) :1793-&
[3]   A METHOD AND APPARATUS FOR SURFACE MODIFICATION BY GAS-CLUSTER ION IMPACT [J].
NORTHBY, JA ;
JIANG, T ;
TAKAOKA, GH ;
YAMADA, I ;
BROWN, WL ;
SOSNOWSKI, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2) :336-340
[4]   Indium oxide film formation by O2 cluster ion-assisted deposition [J].
Qin, W ;
Howson, RP ;
Akizuki, M ;
Matsuo, J ;
Takaoka, G ;
Yamada, I .
MATERIALS CHEMISTRY AND PHYSICS, 1998, 54 (1-3) :258-261
[5]  
YAMADA I, 1996, J VAC SCI TECHNOL A, V14, P1
[6]  
YAMADA I, 1998, MAT SCI SEMICON PROC, V1, P27