Human hair keratin for physically transient resistive switching memory devices

被引：70

作者：

Lin, Qiqi ^{[1
]}

Hao, Shilei ^{[2
]}

Hu, Wei ^{[1
]}

Wang, Ming ^{[1
]}

Zang, Zhigang ^{[1
]}

Zhu, Linna ^{[3
]}

Du, Juan ^{[4
]}

Tang, Xiaosheng ^{[1
]}

机构：

[1] Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Minist Educ, Chongqing 400044, Peoples R China

[2] Chongqing Univ, Coll Bioengn, Key Lab Biorheol Sci & Technol, Minist Educ, Chongqing 400030, Peoples R China

[3] Southwest Univ, Fac Mat & Energy, Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2019年 / 7卷 / 11期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; SILK FIBROIN; BIOMATERIAL FILM; PROTEIN; ELECTRONICS;

D O I：

10.1039/c8tc05334k

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Biomaterials have attracted attention as useful structural components in biodegradable and transient electronics due to their solution processability, biocompatibility and bioresorbability. In this work, we report the thin films of biocompatible keratin from human hair as the solid electrolyte layer in resistive switching memory devices, exhibiting great electrical performance, high transmittance, and physically transient property. This nonvolatile memory device exhibited reproducible resistive switching performance, uniform switching voltages, and a concentrated distribution of low and high resistance states. The resistive switching mechanism of the Ag/keratin/FTO device was described via the electrochemical formation/rupture of the Ag metallic filament in the keratin layer. In addition, the keratin thin films could be dissolved in deionized water within 30 minutes, presenting the potential biodegradability and physically transient characteristics of the memory devices. These biocompatible memory devices are environmentally friendly, sustainable and inexpensive and act as promising candidates for memory applications.

引用

页码：3315 / 3321

页数：7

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