Preparation of high-performance Sb2S3 based visible-light photodetector with excellent reversibility

In this study, Sb2S3 films were prepared by dip coating method at 250, 300, 350, 400 and 450 degrees C temperatures. No heat treatment was applied other than the coating temperatures. XRD, SEM, EDX and photoluminescence measurements of the prepared films were carried out. In addition, metal-semiconductor-metal (MSM) type photodetectors were prepared using Sb2S3 films. According to XRD and SEM results, films coated at 250 degrees C are still in amorphous structure. On the other hand, the films begin to crystallize at 300 degrees C. The EDX results show that the S/Sb ratio of Sb2S3 films varies between 1.35 and 1.55 depending on the coating temperature. Photoluminescence results show a strong emission peak with an energy value of 1.98 eV for all samples. Photocurrents of the prepared photodetectors vary between 0.44 and 48.15 nA depending on the coating temperature. A photosensitivity of 56.81 was observed with the photodetector prepared at 400 degrees C. In addition, Sb2S3 photodetectors prepared at 400 degrees C exhibit rise and decay times of -0.4 and -0.4 s, respectively with an excellent reversibility.