Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes

被引：56

作者：

Fujiwara, Hirokazu ^{[1
]}

Naruoka, Hideki ^{[1
]}

Konishi, Masaki ^{[1
]}

Hamada, Kimimori ^{[1
]}

Katsuno, Takashi ^{[2
]}

Ishikawa, Tsuyoshi ^{[2
]}

Watanabe, Yukihiko ^{[2
]}

Endo, Takeshi ^{[3
]}

机构：

[1] Toyota Motor Co Ltd, Toyota, Aichi 4700309, Japan

[2] Toyota Cent Res & Dev Labs Inc, Power Elect Res Div, Nagakute, Aichi 4801192, Japan

[3] DENSO CORP, Res Labs, Nisshin, Aichi 4700111, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期

关键词：

DEFECTS; PERFORMANCE; SUBSTRATE; BREAKDOWN;

D O I：

10.1063/1.4738886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nano-scale pits above the threading dislocations were found to be in the same location as the leakage current points in Schottky barrier diodes and junction barrier Schottky diodes. This study compared the leakage current of 1.2 kV, 200A diodes with and without nano-scale pits. The leakage current in diodes without nano-scale pits was lower than those in diodes with pits. In the diodes without nano-scale pits, the leakage currents were generated at step-bunching area and the leakage current at the threading dislocations was not observed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738886]

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页数：4

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