Electrostatic force spectroscopy and imaging of Bi wires: Spatially resolved quantum confinement

被引：28

作者：

Gekhtman, D ^{[1
]}

Zhang, ZB

Adderton, D

Dresselhaus, MS

Dresselhaus, G

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] Digital Instruments, Santa Barbara, CA 93117 USA

[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[4] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.82.3887

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate that scanning probe electrostatic force microscopy applied to a nanoscale electronic structure can be used for studying the spatially resolved carrier quantized states as determined by the screening properties of local surface regions of the structure. The results presented for the cross-sectional surface of Bi quantum wires elucidate the microscopic nature of quasi-one-dimensional confined states excited by an applied bias voltage, where the single-particle-in-a-box energy quantization competes with the wire boundary enhanced intercarrier Coulomb repulsion.

引用

页码：3887 / 3890

页数：4

共 13 条

[1] ATOMIC FORCE MICROSCOPE [J].