Growth and characterization of pine-needle-shaped GaN nanorods by sputtering and ammoniating process

被引：2

作者：

Li, Bao-li ^{[1
]}

Zhuang, Hui-zhao ^{[1
]}

Xue, Cheng-shan ^{[1
]}

Zhang, Shi-ying ^{[1
]}

机构：

[1] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 43卷 / 03期

基金：

中国国家自然科学基金;

关键词：

GaN nanorods; Nb; ammoniating;

D O I：

10.1016/j.spmi.2007.11.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Pine-needle-shaped GaN nanorods have been successfully synthesized on Si(111) substrates by ammoniating Ga2O3/Nb films at 950 degrees C in a quartz tube. The products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and field-emission transmission electron microscope (FETEM). The results show that the pine-needle-shaped nanorods have a pure hexagonal GaN wurtzite with a diameter ranging from 100 to 200 run and a length up to several microns. The photoluminescence spectra (PL) measured at room temperature only exhibit a strong emission peak at 368 nm. Finally, the growth mechanism of GaN nanorods is also briefly explored. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：262 / 267

页数：6

共 28 条

[1] Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia [J].

Ai, Yujie ;

Xue, Chengshan ;

Sun, Chuanwei ;

Sun, Lili ;

Zhuang, Huizhao ;

Wang, Fuxue ;

Li, Hong ;

Chen, Jinhua .

MATERIALS LETTERS, 2007, 61 (13) :2833-2836

[2] Catalytic growth and characterization of gallium nitride nanowires [J].

Chen, CC ;

Yeh, CC ;

Chen, CH ;

Yu, MY ;

Liu, HL ;

Wu, JJ ;

Chen, KH ;

Chen, LC ;

Peng, JY ;

Chen, YF .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (12) :2791-2798

[3] Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy [J].

Chen, Hung-Ying ;

Lin, Hon-Way ;

Shen, Chang-Hong ;

Gwo, Shangjr .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[4] High transconductance heterostructure field-effect transistors based on AlGaN/GaN [J].

Chen, Q ;

Khan, MA ;

Yang, JW ;

Sun, CJ ;

Shur, MS ;

Park, H .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :794-796

[5]

CHEN X, 2006, APPL PHYS LETT, V91

[6] Large-scale synthesis of single crystalline gallium nitride nanowires [J].

Cheng, GS ;

Zhang, LD ;

Zhu, Y ;

Fei, GT ;

Li, L ;

Mo, CM ;

Mao, YQ .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2455-2457

[7] Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111) [J].

Debnath, R. K. ;

Meijers, R. ;

Richter, T. ;

Stoica, T. ;

Calarco, R. ;

Lueth, H. .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[8] Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3 [J].

He, MQ ;

Minus, I ;

Zhou, PZ ;

Mohammed, SN ;

Halpern, JB ;

Jacobs, R ;

Sarney, WL ;

Salamanca-Riba, L ;

Vispute, RD .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3731-3733

[9] Chemistry and physics in one dimension: Synthesis and properties of nanowires and nanotubes [J].

Hu, JT ;

Odom, TW ;

Lieber, CM .

ACCOUNTS OF CHEMICAL RESEARCH, 1999, 32 (05) :435-445

[10] III-nitrides: Growth, characterization, and properties [J].

Jain, SC ;

Willander, M ;

Narayan, J ;

Van Overstraeten, R .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :965-1006

← 1 2 3 →