The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

被引：0

作者：

Oh, Min-Suk ^{[1
]}

机构：

[1] Korea Inst Ind Technol KITECH, Automot Components & Mat R&D Grp, Gwangju 61012, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 04期

关键词：

II-VI compound semiconductor; surface modification; thin film; homogenized excimer laser; electrode; ohmic contact; MOLECULAR-BEAM EPITAXY; THIN-FILM TRANSISTORS; ZINC-OXIDE; P-GAN; PLASMA TREATMENT; RESISTANCE; IRRADIATION; PERFORMANCE; FABRICATION; LAYERS;

D O I：

10.1007/s11664-017-6046-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO (N (d) = 4.3 x 10(17) cm(-3)). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 x 10(-4) similar to 4.8 x 10(-4) Omega cm(2) depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 x 10(-2) Omega cm(2). X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

引用

页码：2257 / 2262

页数：6

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