Local melting in silicon driven by retrograde solubility

被引：9

作者：

Fenning, D. P. ^{[1
]}

Newman, B. K. ^{[1
]}

Bertoni, M. I. ^{[1
]}

Hudelson, S. ^{[1
]}

Bemardis, S. ^{[1
]}

Marcus, M. A. ^{[2
]}

Fakra, S. C. ^{[2
]}

Buonassisi, T. ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

ACTA MATERIALIA | 2013年 / 61卷 / 12期

基金：

美国国家科学基金会;

关键词：

Silicon; Nickel; Precipitation; Retrograde melting; Melting; RAY-ABSORPTION SPECTROSCOPY; NEUTRON-ACTIVATION ANALYSIS; ELECTRICAL-PROPERTIES; IMPURITY ELEMENTS; TRANSITION-METALS; SOLID SOLUBILITY; NICKEL; PRECIPITATION; MECHANISMS; GERMANIUM;

D O I：

10.1016/j.actamat.2013.03.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High point-defect enthalpy of formation leads to retrograde solubility for a number of solutes in silicon, especially d-shell transition metals. We present direct experimental evidence for a thermodynamic pathway leading to local retrograde melting in silicon driven by the retrograde solubility of low-concentration metallic solutes at temperatures above the bounding liquid-silicide-silicon invariant reaction. We experimentally demonstrate this local melting pathway using in situ synchrotron-based X-ray microprobe measurements of silicon supersaturated with nickel, wherein solute precipitation into liquid droplets is observed. No significant energy barrier is observed for the nucleation of the liquid droplets at the surface, suggesting that in the Ni-Si system, retrograde melting will occur upon supersaturation if favorable heterogeneous nucleation sites are available. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：4320 / 4328

页数：9

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