A demonstration HTS base station sub-system for mobile communications

被引:4
作者
Li, H
He, YS
He, AS
Li, SZ
Li, CG
Yan, LW
Liang, JT
Zhu, WX
Zhou, Y
Hong, JS
Lancaster, MJ
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] No Univ Technol, Beijing 100041, Peoples R China
[3] Chinese Acad Sci, Cryogen Lab, Beijing 100080, Peoples R China
[4] Chinese Acad Sci, Inst Acoust, Beijing 100080, Peoples R China
[5] Univ Birmingham, Sch Elect & Elect Engn, Birmingham B15 2TT, W Midlands, England
关键词
D O I
10.1088/0953-2048/15/2/317
中图分类号
O59 [应用物理学];
学科分类号
摘要
A demonstration sub-system for mobile communications was developed. In this system, a high-temperature superconducting (HTS) microstrip bandpass filter on r-plane sapphire substrate was designed to have a quasi-elliptic function response, which was aimed at covering the whole receive band of DCS 1800 base station, i.e. 1710-1785 MHz. This filter was then integrated with a low noise amplifier (LNA) and a pulse tube cryocooler, forming a demonstration sub-system. Satisfactory performance of this system was achieved.
引用
收藏
页码:276 / 279
页数:4
相关论文
共 11 条
[1]   On the development of superconducting microstrip filters for mobile communications applications [J].
Hong, JS ;
Lancaster, MJ ;
Jedamzik, D ;
Greed, RB .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (09) :1656-1663
[2]  
Jordan GB, 1996, MICROWAVE J, V39, P116
[3]  
Kim HT, 1999, IEEE T APPL SUPERCON, V9, P3909, DOI 10.1109/77.783882
[4]   Characterization of high-Q resonators for microwave-filter applications [J].
Kwok, RS ;
Liang, JF .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (01) :111-114
[5]  
LIANG JF, 1999, IEEE MTT S AN
[6]  
PEPPEL M, 1998, ELECTRON LETT, V34, P929
[7]   Field deployable microwave filters made from superconductive thick films [J].
Remillard, SK ;
Abdelmonem, A ;
Radzikowski, PO ;
Lazzaro, ND ;
Applegate, DS .
JOURNAL OF SUPERCONDUCTIVITY, 2001, 14 (01) :47-56
[8]  
SABATAITICS JC, 1996, ADV CRYOGENIC ENG
[9]  
TSUZUKI G, 2000, P ICMMT 2000
[10]  
Ueno Y, 1999, IEICE T ELECTRON, VE82C, P1172