Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range

被引：78

作者：

Dietz, Roman J. B. ^{[1
]}

Globisch, Bjoern ^{[1
]}

Roehle, Helmut ^{[1
]}

Stanze, Dennis ^{[1
]}

Goebel, Thorsten ^{[1
]}

Schell, Martin ^{[1
]}

机构：

[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Einsteinufer 37, D-10587 Berlin, Germany

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 16期

关键词：

Temperature - Photoconductivity - Semiconducting indium gallium arsenide - Terahertz spectroscopy - Molecular beam epitaxy - Reflectometers - Bandwidth - Carrier concentration;

D O I：

10.1364/OE.22.019411

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz detectors based on molecular beam epitaxy (MBE) of low temperature (LT) grown In0.53Ga0.47As/In0.52Al0.48 As multilayer heterostructures (MLHS). We show how the optical excitation power affects carrier lifetime, detector signal, dynamic range and bandwidth in THz time domain spectroscopy (TDS) in dependence on Be-doping concentration. For optimal doping we measured a THz bandwidth in excess of 6 THz and a dynamic range of up to 90 dB. (C) 2014 Optical Society of America

引用

收藏

页码：19411 / 19422

页数：12

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