Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications

被引：12

作者：

Biasotto, C. ^{[1
,2
]}

Diniz, J. A. ^{[1
,2
]}

Daltrini, A. M. ^{[1
]}

Moshkalev, S. A. ^{[1
]}

Monteiro, M. J. R. ^{[1
]}

机构：

[1] Univ Estadual Campinas, CCS, BR-13083870 Campinas, SP, Brazil

[2] Univ Estadual Campinas, Sch Elect & Comp Engn FEEC, BR-13083870 Campinas, SP, Brazil

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 21期

基金：

巴西圣保罗研究基金会;

关键词：

electron cyclotron resonance (ECR) plasma; silicon nitride; microelectromechanical system (MEMS); thin film deposition;

D O I：

10.1016/j.tsf.2008.03.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin silicon nitride films have been deposited by a low temperature (20 degrees C) Electron Cyclotron Resonance (ECR) plasma directly on Si substrates. Varying the process pressure, gas composition and radio frequency bias power, films with different properties were obtained. Characterization by Fourier transform infra-red spectrometry reveals the presence of Si-N, Si-H and N-H bonds in the films. Refractive indexes in the range from 1.77 to 2.9 and deposition rates from 13 to 18 nm/min were determined by ellipsometry. Buffered hydrofluoric acid (BHF) etch rates from 0.7 to 509 nm/min, and KOH etch rates lower than I nm/min were obtained. Optical emission spectroscopy showed a strong correlation between the concentration of NH molecules produced in the plasma and porosity of the films. Finally, the films that presented high resistance to etching in KOH and BHF were used to fabricate suspended membranes on Si substrates. With these results, the ECR plasma produced SiNx films that have been used for fabrication of membranes in microelectromechanical systems. (c) 2008 Elsevier B. V. All rights reserved.

引用

页码：7777 / 7782

页数：6

共 24 条

[1]

Anderson D., 1974, ANAL SILICONES

[2] Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma [J].

Bae, S ;

Farber, DG ;

Fonash, SJ .

SOLID-STATE ELECTRONICS, 2000, 44 (08) :1355-1360

[3] Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma [J].

Biasotto, C. ;

Daltrini, A. M. ;

Teixeira, R. C. ;

Boscoli, F. A. ;

Diniz, J. A. ;

Moshkalev, S. A. ;

Doi, I. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (04) :1166-1170

[4]

BIASOTTO C, 2005, THESIS U CAMPINAS BR

[5] Application of excitation cross sections to optical plasma diagnostics [J].

Boffard, JB ;

Lin, CC ;

DeJoseph, CA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (12) :R143-R161

[6] CONFIGURATIONAL STATISTICS IN A-SIXNYHZ ALLOYS - A QUANTITATIVE BONDING ANALYSIS [J].

BUSTARRET, E ;

BENSOUDA, M ;

HABRARD, MC ;

BRUYERE, JC ;

POULIN, S ;

GUJRATHI, SC .

PHYSICAL REVIEW B, 1988, 38 (12) :8171-8184

[7] Mode transitions in low pressure rare gas cylindrical ICP discharge studied by optical emission spectroscopy [J].

Czerwiec, T ;

Graves, DB .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (20) :2827-2840

[8] Mode transitions and hysteresis in inductively coupled plasmas [J].

Daltrini, A. M. ;

Moshkalev, S. A. ;

Monteiro, M. J. R. ;

Besseler, E. ;

Kostryukov, A. ;

Machida, M. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)

[9] Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs [J].

Diniz, JA ;

Doi, I ;

Swart, JW .

MATERIALS CHARACTERIZATION, 2003, 50 (2-3) :135-147

[10] Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition [J].

Flewitt, AJ ;

Dyson, AP ;

Robertson, J ;

Milne, WI .

THIN SOLID FILMS, 2001, 383 (1-2) :172-177

← 1 2 3 →