Current transport in carbon nanotube transistors

被引:0
|
作者
Pourfath, Mahdi [1 ]
Selberherr, Siegfried [1 ]
机构
[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
来源
2008 7TH INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS | 2008年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Carbon nanotubes (CNTs) have been studied in recent years due to their exceptional electronic, opto-electronic, and mechanical properties. To explore the physics of carbon nanotube field-effect transistors (CNT-FETs) self-consistent quantum mechanical simulations have been performed. The performance of carbon nanotube-based transistors is analyzed numerically, employing the non-equilibrium Green's function formalism. Electron-phonon interaction parameters, such as electron-phonon coupling strength and phonon energy, strongly depend on the chirality and the diameter of the carbon nanotube. The steady-state and the dynamic response of carbon nanotube based transistors are studied for a wide range of electron-phonon interaction parameters.
引用
收藏
页码:351 / 356
页数:6
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