Single-longitudinal-mode Er:GGG microchip laser operating at 2.7 μm

被引：53

作者：

You, Zhenyu ^{[1
]}

Wang, Yan ^{[1
]}

Xu, Jinlong ^{[1
]}

Zhu, Zhaojie ^{[1
]}

Li, Jianfu ^{[1
]}

Wang, Hongyan ^{[2
]}

Tu, Chaoyang ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China

[2] CRYSTECH Inc, Qingdao 266107, Shandong, Peoples R China

来源：

OPTICS LETTERS | 2015年 / 40卷 / 16期

基金：

中国国家自然科学基金;

关键词：

DIODE; CRYSTALS;

D O I：

10.1364/OL.40.003846

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We reported on a diode-end-pumped single-longitudinal-mode microchip laser using a 600-mu m-thick Er: GGG crystal at similar to 2.7 mu m, generating a maximum output power of 50.8 mW and the maximum pulsed energy of 0.306 mJ, with repetition rates of pumping light of 300, 200, and 100 Hz, respectively. The maximum slope efficiency of the laser was 20.1%. The laser was operated in a single-longitudinal mode centered at about 2704 nm with a FWHM of 0.42 nm. The laser had a fundamental beam profile and the beam quality parameter M-2 was measured as 1.46. These results indicate that the Er: GGG microchip laser is a potential compact mid-infrared laser source. (C) 2015 Optical Society of America

引用

页码：3846 / 3849

页数：4

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