Microstructure and supercapacitive properties of rf-sputtered copper oxide thin films: influence of O2/Ar ratio

被引：32

作者：

Purusottam-Reddy, B. ^{[1
]}

Sivajee-Ganesh, K. ^{[1
]}

Jayanth-Babu, K. ^{[1
]}

Hussain, O. M. ^{[1
]}

Julien, C. M. ^{[2
,3
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India

[2] Univ Paris 06, Univ Sorbonne, Lab PHENIX, UMR 8234, F-75005 Paris, France

[3] CNRS, Lab PHENIX, UMR 8234, F-75005 Paris, France

来源：

IONICS | 2015年 / 21卷 / 08期

关键词：

Copper oxide thin films; Sputtering; Microstructure; Supercapacitors; CUO; BEHAVIOR; PERFORMANCE; ELECTRODE;

D O I：

10.1007/s11581-015-1403-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We prepared copper oxide thin films as electrode of supercapacitors. Films of Cu-O were grown by rf-magnetron sputtering on stainless steel substrates maintained at 350 A degrees C under different O-2/Ar ratios by keeping the sputtering pressure at similar to 1 Pa and rf-power at 220 W. The changes in the phase of copper oxide thin films from metallic copper to Cu2O, Cu2O to Cu4O3 and then to CuO were observed by varying O-2/Ar ratio from 1:25 to 1:1. Electrochemical impedance spectroscopy studies show a low charge transfer resistance of 0.3 a"broken vertical bar cm(-2) for copper oxide thin films prepared at 1:11 O-2/Ar. The cyclic voltammetric studies exhibited a high rate ratio pseudocapacitance of 357 mF cm(-2) at 0.5 mV s(-1) for these copper oxide thin films with very good cycling capacitance even after 1000 cycles.

引用

页码：2319 / 2328

页数：10

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