Microstructure and supercapacitive properties of rf-sputtered copper oxide thin films: influence of O2/Ar ratio

被引：29
作者：
Purusottam-Reddy, B. [1 ]
Sivajee-Ganesh, K. [1 ]
Jayanth-Babu, K. [1 ]
Hussain, O. M. [1 ]
Julien, C. M. [2 ,3 ]
机构：
[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India
[2] Univ Paris 06, Univ Sorbonne, Lab PHENIX, UMR 8234, F-75005 Paris, France
[3] CNRS, Lab PHENIX, UMR 8234, F-75005 Paris, France
来源：
IONICS | 2015年 / 21卷 / 08期
关键词：
Copper oxide thin films; Sputtering; Microstructure; Supercapacitors; CUO; BEHAVIOR; PERFORMANCE; ELECTRODE;
D O I：
10.1007/s11581-015-1403-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We prepared copper oxide thin films as electrode of supercapacitors. Films of Cu-O were grown by rf-magnetron sputtering on stainless steel substrates maintained at 350 A degrees C under different O-2/Ar ratios by keeping the sputtering pressure at similar to 1 Pa and rf-power at 220 W. The changes in the phase of copper oxide thin films from metallic copper to Cu2O, Cu2O to Cu4O3 and then to CuO were observed by varying O-2/Ar ratio from 1:25 to 1:1. Electrochemical impedance spectroscopy studies show a low charge transfer resistance of 0.3 a"broken vertical bar cm(-2) for copper oxide thin films prepared at 1:11 O-2/Ar. The cyclic voltammetric studies exhibited a high rate ratio pseudocapacitance of 357 mF cm(-2) at 0.5 mV s(-1) for these copper oxide thin films with very good cycling capacitance even after 1000 cycles.
引用
收藏
页码：2319 / 2328
页数：10
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