Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

被引：258

作者：

Oshima, Ryuji ^{[1
]}

Takata, Ayami ^{[1
,2
]}

Okada, Yoshitaka ^{[1
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2973398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated GaAs-based p-i-n quantum dot solar cells (QDSCs) with 10 up to 20 stacked layers of self-assembled InAs quantum dots (QDs) grown by atomic hydrogen-assisted molecular beam epitaxy. The net average lattice strain was minimized by using the strain-compensation technique, in which GaNAs dilute nitrides were used as spacer layers. The filtered short-circuit current density beyond GaAs bandedge was 2.47 mA/cm(2) for strain-compensated QDSC with 20 stacks of InAs QD layers, which was four times higher than that for strained QDSC with identical cell structure. (C) 2008 American Institute of Physics.

引用

页数：3

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