Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

被引：256

作者：

Oshima, Ryuji ^{[1
]}

Takata, Ayami ^{[1
,2
]}

Okada, Yoshitaka ^{[1
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2973398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated GaAs-based p-i-n quantum dot solar cells (QDSCs) with 10 up to 20 stacked layers of self-assembled InAs quantum dots (QDs) grown by atomic hydrogen-assisted molecular beam epitaxy. The net average lattice strain was minimized by using the strain-compensation technique, in which GaNAs dilute nitrides were used as spacer layers. The filtered short-circuit current density beyond GaAs bandedge was 2.47 mA/cm(2) for strain-compensated QDSC with 20 stacks of InAs QD layers, which was four times higher than that for strained QDSC with identical cell structure. (C) 2008 American Institute of Physics.

引用

页数：3

共 18 条

[1] BAILEY C, 2007, MRS S P, V1031, P44505
[2] Strain-balanced criteria for multiple quantum well structures and its signature in X-ray rocking curves
Ekins-Daukes, NJ
Kawaguchi, K
Zhang, J
[J]. CRYSTAL GROWTH & DESIGN, 2002, 2 (04) : 287 - 292
[3] Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1-xPx -: art. no. 093518
Kim, NH
Ramamurthy, P
Mawst, LJ
Kuech, TF
Modak, P
Goodnough, TJ
Forbes, DV
Kanskar, M
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
[4] Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers
Laghumavarapu, R. B.
El-Emawy, M.
Nuntawong, N.
Moscho, A.
Lester, L. F.
Huffaker, D. L.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (24)
[5] Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels
Luque, A
Marti, A
[J]. PHYSICAL REVIEW LETTERS, 1997, 78 (26) : 5014 - 5017
[6] Emitter degradation in quantum dot intermediate band solar cells
Marti, A.
Lopez, N.
Antolin, E.
Canovas, E.
Luque, A.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (23)
[7] Quantum dot solar cells
Nozik, AJ
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 14 (1-2) : 115 - 120
[8] OKADA Y, 2005, P 29 EUR PHOT UNPUB, P44505
[9] OSHIMA R, 2007, P 22 EUR PHOT UNPUB, P44505
[10] Multiple stacking of self-assembled InAs quantum dots embedded by GaNAs strain compensating layers
Oshima, Ryuji
Hashimoto, Takayuki
Shigekawa, Hidemi
Okada, Yoshitaka
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)

← 1 2 →