DLTS AND C-V CHARACTERIZATION OF DEFECTS IN N- AND P-TYPE SILICON IMPLANTED WITH HEAVY IONS

The understanding of microscopic mechanisms ion-solid interactions and defect creation and evolution under ion irradiation is complicated by many parameters involved in the formation of stable radiation induced complexes [I]. Though there have been published a lot experimental papers on this subject, nevertheless, there remains many disputable problems in their interpretation that makes uncertain the quantitative modeling of radiation induced damage in ion implanted silicon. The purpose of this work is to use capacitance methods for characterization post-implantation damage in silicon structures formed after irradiation with high-energy ions. It has been found that the defect introduction rates in p- and n-type silicon irradiated with heavy ions are essentially different, and much larger for p-type silicon. Trajectory parts where isolated point defects are formed and cluster concentration is small have been experimentally determined. The contribution of clusterized defects on ion retarding process in silicon crystals is investigated as well. It is established that defect clusters consist mainly of vacancy-type defects while the defects of interstitial-type are located outside of the clusters.