Novel concept for heterogeneously integrated high-speed III-V photodetector on silicon nitride waveguide

被引：0
|
作者：
Keyvaninia, Shahram [1 ]
Runge, Patrick [1 ]
Schindler, Alexander [1 ]
Beckerwerth, Tobias [1 ]
Schell, Martin [1 ]
机构：
[1] Fraunhofer Heinrich Hertz Inst, Einsteinufer 37, D-10587 Berlin, Germany
来源：
2018 IEEE PHOTONICS CONFERENCE (IPC) | 2018年
关键词：
photodetector; silicon nitride Si3N4 waveguide; heterogeneous integration; silicon photonics; PHOTONIC INTEGRATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel design for heterogeneously integrated high-speed III-V photodetectors on the Si3N4 platform is proposed. This new approach offers a new platform to merge III-V and Si3N4 for 3D integration. The design is shown to have a high tolerance to bonding and lithography misalignment.
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页数：2
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